KVR16N11/8WP 8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM • JEDEC standard 1.5V Power Supply • VDDQ = 1.5V • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal banks • Programmable CAS latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº • Asynchronous Reset • PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

MEMORIA RAM 8gb DDR3 KINGSTON KVR16N11/8WP

$583.00
¡No te lo pierdas, es el último!
MEMORIA RAM 8gb DDR3 KINGSTON KVR16N11/8WP $583.00
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  • Chito Gamer 1 *Chito 1: Calle Amado Nervo, entre Jazmin y Gardenia, Col. San Nicolás. entre oficinas del INE, motel Run Run, Colegio Continental y Salón El Señorial. *Lunes a Domingo 8am a 9:30pm* Ubicación: https://goo.gl/maps/etsmC4G6Nb22

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KVR16N11/8WP 8GB 2Rx8 1G x 64-Bit PC3-12800 CL11 240-Pin DIMM • JEDEC standard 1.5V Power Supply • VDDQ = 1.5V • 800MHz fCK for 1600Mb/sec/pin • 8 independent internal banks • Programmable CAS latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS) • Bi-directional Differential Data Strobe • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº • Asynchronous Reset • PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)